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 RB521S30_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 3 of 12 NXP Semiconductors RB521S30 200 mA low VF MEGA Schottky barrier recti?er [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Tj =25°C prior to surge. [3] Re?ow soldering is the only recommended soldering method. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. 6. Thermal characteristics [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a signi?cant part of the total power losses. [2] Re?ow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab. Tj junction temperature - 150°C Tamb ambient temperature ?55 +150 °C Tstg storage temperature ?65 +150 °C Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance fromin free air junction to ambient [1][2] [3]- - 455 K/W [4]- - 300 K/W [5]- - 250 K/W Rth(j-sp) thermal resistance from junction to solder point [6]--90K/W |